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baocheng 8205

Name: baocheng 8205
Brand: baocheng
Price: 1 USD

Model Number : 8205

Gate Threshold Voltage (Vgs(th)) : 1V@250uA

Reverse Transfer Capacitance (Crss@Vds) : 74.69pF

Delivery Time : 12-40 weeks

Gate Charge(Qg) : 8.2nC@4.5V

MOQ : 500

Description : N-Channel 20V 5A 2W Surface Mount TSSOP-8

Packaging Details : TSSOP-8

Pd - Power Dissipation : 2W

Stock : 100000

RDS(on) : 34mΩ@2.5V

Type : N-Channel

Input Capacitance(Ciss) : 522.3pF

Brand Name : baocheng

Drain to Source Voltage : 20V

Current - Continuous Drain(Id) : 5A

Output Capacitance(Coss) : 98.48pF

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Product Overview

The 8205 Power MOSFET is an N-channel device designed for portable and battery-powered equipment. It is supplied in 8 wafer form and features a 20V drain-source voltage and a 5A continuous drain current. This MOSFET is sampling tested at probe, ensuring quality for demanding applications.

Product Attributes

Die in 8 Wafer Form
N-channel

Technical Specifications

Electrical Characteristics	Symbol	Parameter	Conditions	Min	Typ	Max	Units
Absolute Maximum Ratings TA=25C unless otherwise noted	BVDSS	Drain-Source Breakdown Voltage	VGS = 0V, ID = 250uA	20	--	--	V
	RDS(on)	Drain-Source On-Resistance	VGS =4.5V, ID =4A	20.5	--	25	m
	RDS(on)	Drain-Source On-Resistance	VGS =2.5V, ID =3A	25	--	34	m
	VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250uA	0.5	--	1.0	V
	IDSS	Drain Current (Zero Gate Voltage)	VDS = 20V, VGS = 0V	--	--	1	uA
	IGSS	Gate Current (Zero Drain Voltage)	VGS = 8V, ID=0	--	--	100	nA
	Qg	Total Gate Charge	VDS = 10V, ID = 5A, VGS = 4.5V	--	6.2	8.2	nC
	Qgs	Gate-Source Charge		--	1.6	2.2	nC
	Qgd	Gate-Drain Charge		--	1.4	1.74	nC
	td(on)	Turn-on Delay Time	VDD = 10V, ID = 5A	--	10.5	20.8	ns
	tr	Turn-on Rise Time	ID = 1A, VGS = 4.5V	--	4.6	8.8	ns
	td(off)	Turn-off Delay Time		--	27.3	54.72	ns
	tf	Turn-off Fall Time		--	4.2	8.32	ns
	Ciss	Input Capacitance	VDS = 8V, VGS = 0V, f=1.0MHz	--	522.3	--	pF
	Coss	Output Capacitance		--	98.48	--	pF
	Crss	Reverse Transfer Capacitance		--	74.69	--	pF
Diode Characteristics	IS	Diode Maximum Forward Current		--	--	1.7	A
	VSD	Diode Forward Voltage	IS = 1.7A, VGS = 0V	--	--	1.2	V

Symbol	Parameter	Conditions	TA = 25C	TA = 75C	Units
PD	Maximum Power Dissipation		2	1.3	W

Symbol	Parameter	Min	Typ	Max	Units
TJ, Tstg	Operating Junction and Storage Temperature Range	-55	--	150
RJA	Thermal Resistance Junction to Ambient (PCB Mounted)	--	62.5	--	/W

Note: Repetitive Rating: Pulse width limited by maximum junction temperature. Reflow soldering furnace temperature should be controlled below 265C.

baocheng 8205 Images

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